CrGex nanowires synthesis

Using the CVD technique, nanowires were prepared from GeH₄ and Cr(acac)₃ precursors. Cr(acac)₃ precursor was vaporized at 110 °C and transferred in GeH₄ stream to an oven-hot zone at 550 °C where pyrolysis took place. The synthesized nanowires are composed of a crystalline Ge core and an amorphous jacket from a CrGe_x alloy with composition [Cr]:[Ge]=1:(6-7). The electrical resistance of a system nanowire-substrate is 2,7 kW.cm which results probably from the presence of deep centres in the Ge gap generated by Cr atoms. Besides nanowires, Ge nanoballs were grown in deposits during the CVD process. Probably, the nanoballs served as initiation centers for CrGe_x nanowire growth.

• Dřínek V., Tiagulskyi S., Yatskiv R., Grym J., Fajgar R., Jandová V., Koštejn M., Kupčík J., Chemical vapor deposition of germanium-rich CrGe_x nanowires. Beilstein J. Nanotechnol. 12, 1365–1371, 2023. DOI